(a) Calculate the resistivity at T = 300 K of intrinsic (i) silicon, (ii) germanium. And (iii)…

(a) Calculate the resistivity at T = 300 K of intrinsic (i) silicon, (ii) germanium. And (iii) gallium arsenide. (b) If rectangular semiconductors bars are fabricated using the materials in part (a), determine the resistance of each bar if its cross-sectional array is 85 µm and length is 200 µm.

(a) Calculate the resistivity at T = 300 K of intrinsic (i) silicon, (ii) germanium. And (iii)…

(a) Calculate the resistivity at T = 300 K of intrinsic (i) silicon, (ii) germanium. And (iii)…